2N6322 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – 30 AMP NPN HIGH VOLTAGE / HIGH ENERGY 200 VOLTS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6322
DESCRIPTION
·With TO-3 package
·High current and high power capability
·Low collector saturation voltage
APPLICATIONS
·For use in high current ,high
power applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
300
200
5
30
10
200
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.5
UNIT
℃/W