2N6312 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N6312
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -40V(Min)
·Low Collector Saturatioin Voltage-
: VCE(sat)= -0.7V(Max.)@ IC= -1.5A
·DC Current Gain-
: hFE= 25-100@ IC= -1.5A
APPLICATIONS
·Designed for general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-40
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-5
ICM
Collector Current-Peak
-10
IB
Base Current-Continuous
-2
PC
Collector Power Dissipation
@ TC=25℃
75
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.32 ℃/W
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