2N6292 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6292
DESCRIPTION
·DC Current Gain-
: h_FE = 30-150@ I_C= 2A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 70V(Min)
·Complement to Type 2N6107
APPLICATIONS
·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
T_stg
Storage Temperature Range
3
A
40
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
3.125 ℃/W
isc Website：www.iscsemi.cn