2N6289 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6289
DESCRIPTION
·DC Current Gain-
: hFE = 30-150@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 30V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.125 ℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
70
℃/W
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