2N6285 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6285 2N6286 2N6287
DESCRIPTION
With TO-3 package
Complement to type 2N6282/6283/6284
High DC current gain
DARLINGTON
APPLICATIONS
For use in general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6285
V_CBO
Collector-base voltage 2N6286
2N6287
2N6285
V_CEO
Collector-emitter voltage 2N6286
2N6287
V_EBO
I_C
I_CM
Emitter-base voltage
Collector current
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-60
-80
-100
-60
-80
-100
-5
-20
-40
-0.5
160
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.09
UNIT
/W