2N6282 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,160W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6282 2N6283 2N6284
DESCRIPTION
With TO-3 package
Complement to type 2N6285/6286/6287
High DC current gain
DARLINGTON
APPLICATIONS
For use in general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6282
V_CBO
Collector-base voltage 2N6283
2N6284
2N6282
V_CEO
Collector-emitter voltage 2N6283
2N6284
V_EBO
I_C
I_CM
Emitter-base voltage
Collector current
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
60
80
100
60
80
100
5
20
40
0.5
160
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.09
UNIT
/W