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| 2N6275 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6275
DESCRIPTION
·High Switching Speed
·High DC Current Gain-
: hFE= 30-120@ IC= 20A
·Low Collector Saturation Voltage-
: VCE(sat)=1.0V(Min.)@ IC= 20A
·Complement to Type 2N6378
APPLICATIONS
·Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
140
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
50
A
ICM
Collector Current-Peak
100
A
IBB
Base Current-Continuous
20
A
PC
Collector Power Dissipation @TC=25â 250
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature Range
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.7 â/W
isc Websiteï¼www.iscsemi.cn
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