2N6263 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6263 2N6264
DESCRIPTION
With TO-66 package
High breakdown voltage
Low collector saturation voltage
APPLICATIONS
A wide variety of m edium-to-high power,
high-voltage applications
Series and shunt regulators
High-fidelity amplifiers
Power switching circuits
Solenoid drivers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N6263
2N6264
V_CEO
Collector-emitter voltage
2N6263
2N6264
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
2N6263
P_T
Total power dissipation
2N6264
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
140
170
120
150
7
3
4
2
20
50
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
2N6263
2N6264
MAX
8.75
3.5
UNIT
/W