2N6246 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6246 2N6247 2N6248
DESCRIPTION
With TO-3 package
Low collector saturation voltage
Excellent safe operating area
High gain at high current
APPLICATIONS
General-purpose types of switching
and linear-amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6246
V_CBO
Collector-base voltage 2N6247
2N6248
2N6246
V_CEO
Collector-emitter voltage 2N6247
2N6248
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-70
-90
-110
-60
-80
-100
-5
-15
-5
125
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.4
UNIT
/W