2N6229 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6229 2N6230 2N6231
DESCRIPTION
With TO-3 package
Low collector saturation voltage
Excellent safe operating area
APPLICATIONS
For high power audio; disk head
positioners and other linear applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6229
V_CBO
Collector-base voltage 2N6230
2N6231
2N6229
V_CEO
Collector-emitter voltage 2N6230
2N6231
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-100
-120
-140
-100
-120
-140
-7
-10
150
150
-65~200
UNIT
V
V
V
A
W
VALUE
0.875
UNIT
/W