2N6059 Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTOR

INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
2N6059
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
h_FE = 750 (Min) @ I_C = 6A
·Collector-Emitter Sustaining Voltage-
V_CEO(SUS)= 100V(Min)
·Complement to type 2N6052
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current
0.2
A
PC
Collector Power Dissipation@TC=25℃ 150
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} ThermalResistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn