2N6057 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
2N6057
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC = 6A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
·Complement to type 2N6050
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current
0.2
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
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