2N6055 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6055 2N6056
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2N6053;2N6054
APPLICATIONS
·General-purpose power amplifier and low
frequency swithing applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N6055
2N6056
V_CEO
Collector-emitter voltage
2N6055
2N6056
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
60
80
60
80
5
8
16
120
100
200
-65~200
UNIT
V
V
V
A
A
mA
W
℃
℃
VALUE
1.75
UNIT
℃/W