2N6053 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,100W)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6053 2N6054
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2N6055;2N6056
APPLICATIONS
·General-purpose power amplifier and low
frequency swithing applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N6053
2N6054
Open emitter
V_CEO
2N6053
Collector-emitter voltage
2N6054
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-8
-16
-120
100
200
-65~200
UNIT
V
V
V
A
A
mA
W
℃
℃
VALUE
1.75
UNIT
℃/W