2N6051 Datasheet, PDF (1/2 Pages) Micrel Semiconductor – PNP DARLINGTON POWER SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
2N6051
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC = -6A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -80V(Min)
·Complement to type 2N6058
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-12
A
ICM
Collector Current-Peak
-20
A
IB
Base Current
-0.2
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}