2N6050 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,150W)

INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2N6050
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain
·Complement to type 2N6057
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-12
A
ICM
Collector Current-Peak
-20
A
IB
Base Current
-0.2
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.17
UNIT
℃/W
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