2N6049 Datasheet, PDF (1/3 Pages) Motorola, Inc – 4 AMPERE POWER TRANSISTOR PNP SILICON

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6049
DESCRIPTION
·With TO-66 package
·Complement to type 2N3054A
APPLICATIONS
·Designed for general purpose switching
and amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-90
-55
-7
-4
-10
-2
75
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
MAX
2.33
UNIT
℃/W