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2N6042 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – PNP DARLINGTON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A
·Complement to Type 2N6045
isc Product Specification
2N6042
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
ICM
Collector Current-Peak
-16
IB
Base Current-DC
PC
Collector Power Dissipation
TC=25â
Tj
Junction Temperature
-120
75
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
mA
W
â
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 â/W
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
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