2N6040 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,80W)

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -4A
·Complement to Type 2N6043
isc Product Specification
2N6040
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
ICM
Collector Current-Peak
-16
IB
Base Current-DC
PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
-120
75
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
mA
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 ℃/W
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