2N6039 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2N6039
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: V_CEO(SUS)= 80V(Min)
·High DC Current Gain-
: h_FE = 750(Min)@I_C= 2A
·Complement to Type 2N6036
APPLICATIONS
·Designed for general purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current
Collector Power Dssipation
PC
TC=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.1
A
40
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
3.12 ℃/W
Thermal Resistance,Junction to Ambient 83.3 ℃/W
isc Website：www.iscsemi.cn