2N6034 Datasheet, PDF (1/3 Pages) STMicroelectronics – MIDIUM POWER DAR;OMGTONS

Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
With TO-126 package
Complement to type 2N6037/6038/6039
DARLINGTON
High DC current gain
APPLICATIONS
Designed for general-purpose amplifier
and low-speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Product Specification
2N6034 2N6035 2N6036
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6034
V_CBO
Collector-base voltage 2N6035
2N6036
2N6034
V_CEO
Collector-emitter voltage 2N6035
2N6036
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-40
-60
-80
-40
-60
-80
-5
-4
-8
-0.1
40
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
3.12
UNIT
/W