2N6029 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6029 2N6030
DESCRIPTION
With TO-3 package
Complement to type 2N5629 2N5630
High power dissipations
APPLICATIONS
For high voltage and high power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N6029
2N6030
V_CEO
Collector-emitter voltage
2N6029
2N6030
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-100
-120
-100
-120
-7
-16
-20
-5.0
200
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.875
UNIT
/W