2N60 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2N60
·FEATURES
·Drain Current –I_D= 2A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 600V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 4.4Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
V
±20
V
I_D
Drain Current-Continuous
2
A
I_DM
Drain Current-Single Plused
8
A
P_D
Total Dissipation @T_C=25℃
42
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
3
℃/W
R_{th j-a} Thermal Resistance, Junction to Ambient 110 ℃/W
isc website：www.iscsemi.cn
1