2N5971 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5971
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 5A
·Excellent Safe Operating Area
APPLICATIONS
·Designed for use in high power audio amplifier applications
and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
PC
Collector Power Dissipation @TC=25℃ 150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
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