2N5879 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,160W)

Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
With TO-3 package
Low collector saturation voltage
Complement to type 2N5881 2N5882
APPLICATIONS
For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N5879 2N5880
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N5879
2N5880
V_CEO
Collector-emitter voltage
2N5879
2N5880
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-15
-30
-5
160
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.1
UNIT
/W