2N5877 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5877 2N5878
DESCRIPTION
With TO-3 package
Low collector saturation voltage
Complement to type 2N5875 2N5876
APPLICATIONS
For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N5877
2N5878
Open emitter
V_CEO
Collector-emitter voltage
2N5877
2N5878
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
60
80
60
80
5
10
20
4
150
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.17
UNIT
/W