2N5873 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5873 2N5874
DESCRIPTION
With TO-3 package
Low collector saturation voltage
APPLICATIONS
For medium-speed switching and
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N5873
2N5874
Open emitter
V_CEO
Collector-emitter voltage
2N5873
2N5874
Open base
V_EBO
I_C
P_D
Emitter-base voltage
Collector current
Total Power Dissipation
Open collector
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
60
80
60
80
5
7
115
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.17
UNIT
/W