2N5867 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5867 2N5868
DESCRIPTION
With TO-3 package
Low collector saturation voltage
APPLICATIONS
For medium-speed switching and
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N5867
2N5868
Open emitter
V_CEO
Collector-emitter voltage
2N5867
2N5868
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_D
Total Power Dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-5
87.5
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.17
UNIT
/W