2N5804 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-3 package
High breakdown voltage
APPLICATIONS
Switching regulator
Inverters
Solenoid and relay drivers
Motor controls
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N5804 2N5805
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N5804
2N5805
V_CEO
Collector-emitter voltage
2N5804
2N5805
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
300
375
225
300
6
5
110
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.25
UNIT
/W