2N5758 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5758 2N5759 2N5760
DESCRIPTION
With TO-3 package
Low collector saturation voltage
Excellent safe operating area
APPLICATIONS
For use in high power audio amplifier
applications and high voltage switching
regulator circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5758
V_CBO
Collector-base voltage 2N5759
2N5760
2N5758
V_CEO
Collector-emitter voltage 2N5759
2N5760
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
100
120
140
100
120
140
7
6
10
4
150
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.17
UNIT
/W