2N5743 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5743 2N5744
DESCRIPTION
With TO-66 package
Low collector saturation voltage
Fast switching speed
APPLICATIONS
For general–purpose switching
and power amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
l
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N5743
2N5744
V_CEO
Collector-emitter voltage
2N5743
2N5744
V_EBO
Emitter-base voltage
I_C
Collector current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=100
VALUE
-60
-100
-60
-100
-5
-20
25
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.875
UNIT
/W