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2N5739 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N5739
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ IC= -5A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=100â
TJ
Junction Temperature
Tstg
Storage Temperature
-4
A
20
W
150
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 4.56 â/W
isc Websiteï¼www.iscsemi.cn
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