2N5737 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N5737
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= -60V(Min.)
·Low Collector Saturation Voltage-
: V_CE(sat)= -0.5V(Max.)@ I_C= -5A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=100℃
TJ
Junction Temperature
T_stg
Storage Temperature
-4
A
50
W
150
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-a} Thermal Resistance,Junction to Ambient 0.5 ℃/W
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