2N5686 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – SI NPN POWER BJT

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5686
DESCRIPTION
·High DC Current Gain-hFE=15~60@IC = 25A
·Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A
·Minimum Lot-to-Lot variations for
robust device performance and reliable operation.
APPLICATIONS
·Designed for use in high power amplifer and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
50
A
IB
Base Current-Continuous
15
A
PC
Collector Power Dissipation @TC=25℃ 300
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.584 ℃/W
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