2N5676 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5676
DESCRIPTION
With TO-66 package
High transition frequency
APPLICATIONS
For use as high-frequency drivers
in audio amplifiers
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-125
-100
-5
-2
2
150
-65~200
UNIT
V
V
V
A
W
VALUE
2.5
UNIT
/W