2N5655 Datasheet, PDF (1/3 Pages) ON Semiconductor – POWER TRANSISTORS NPN SILICON

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5655 2N5656 2N5657
DESCRIPTION
With TO-126 package
High breakdown voltage
APPLICATIONS
For use in line-operated equipment
such as audio output amplifiers;
low-current ,high-voltage converters;
and AC line relays
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N5655
V_CBO
Collector-base voltage 2N5656
2N5657
2N5655
V_CEO
Collector-emitter voltage 2N5656
2N5657
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
275
325
375
250
300
350
6
0.5
1.0
0.25
20
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
6.25
UNIT
/W