2N5631 Datasheet, PDF (1/3 Pages) ON Semiconductor – POWER TRANSISTORS COMPLEMENTARY SILICON

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5631
DESCRIPTION
With TO-3 package
Complement to type 2N6031
High collector-emitter sustaining voltage
High DC current gain@I _C=8A
Low collector saturation voltage
APPLICATIONS
For high power audio amplifier and
high voltage switching regulator
circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
140
140
7
16
20
5.0
200
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.875
UNIT
/W