2N5613 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar PNP Device

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5613 2N5615 2N5617 2N5619
DESCRIPTION
With TO-3 package
Excellent safe operating area
Low collector saturation voltage
APPLICATIONS
For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5613
V_CBO
Collector-base voltage 2N5615/5617 Open emitter
2N5619
2N5613
V_CEO
Collector-emitter voltage 2N5615/5617 Open base
2N5619
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_D
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-80
-100
-120
-60
-80
-100
-5
-5
50
150
-65~150
UNIT
V
V
V
A
W
VALUE
1.5
UNIT
/W