2N5551 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·NPN high-voltage transistor
·Low current (max. 300 mA)
·High voltage (max. 160 V)
·Complements to 2N5401.
isc Product Specification
2N5551
APPLICATIONS
·Designed for Switching and amplification
in high voltage applications , such as telephony
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
180
V
V_CEO
Collector-Emitter Voltage
160
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
0.3
A
I_CM
Collector Current-Peak
0.6
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_a<50℃
0.1
A
0.63
W
J
Junction Temperature
T_stg
Storage Temperature Range
150
℃
-65~150 ℃
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