2N5497 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Low Saturation Voltage-: VCE (sat)= 1V(Max)@IC= 3.5A

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5497
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 70V(Min)
·Low Saturation Voltage-
: V_{CE (sat)}= 1V(Max)@I_C= 3.5A
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CBO
Collector-Base Voltage
90
V_CEV
Collector-Emitter Voltage
V_BE= -1.5V
90
V_CER
Collector-Emitter Voltage
R_BE= 100Ω
80
V_CEO
Collector-Emitter Voltage
70
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current-Continuous
7
I_B
Base Current
Collector Power Dissipation
P_C
@ T_a=25℃
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
3
1.8
50
150
-65~150
UNIT
V
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
2.5 ℃/W
70 ℃/W
isc website：www.iscsemi.cn
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