2N5466 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5466 2N5467
DESCRIPTION
·With TO-3 package
·High-voltage capability
·Fast switching speeds
·Low collector saturation voltage
APPLICATIONS
·They are intended for use in off-line power
supplies ,inverter and converter circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N5466
2N5467
Open emitter
V_CEO
V_EBO
I_C
I_CM
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Open base
Open collector
I_B
Base current
P_D
Total Power Dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
500
700
400
7
3
5
1
140
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.48
UNIT
℃/W