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| 2N5428 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5428
DESCRIPTION
·Contunuous Collector Current-IC= 7A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 7A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching and wide-band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25â
40
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
4.37
UNIT
â/W
isc websiteï¼www.iscsemi.cn
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