2N5193 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR GENERAL PURPOSE POWER

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5193 2N5194 2N5195
DESCRIPTION
With TO-126 package
Complement to type 2N5190/5191/5192
Excellent safe operating area
APPLICATIONS
For use in medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N5193
V_CBO
Collector-base voltage 2N5194
2N5195
2N5193
V_CEO
Collector-emitter voltage 2N5194
2N5195
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-40
-60
-80
-40
-60
-80
-5
-4
-7
-1
40
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
3.12
UNIT
/W