2N4911 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N4911
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 60V(Min)
·Low Collector Saturatioin Voltage-
: V_CE(sat)= 0.6V(Max.)@ I_C= 1A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for driver circuits, switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
60
VEBO Emitter-Base Voltage
5
IC
Collector Current-Continuous
1
ICM
Collector Current-Peak
4
IB
Collector Current-Continuous
1
Collector Power Dissipation
PC
@ TC=25℃
25
TJ
Junction Temperature
200
T_stg
Storage Temperature Range
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
7.0 ℃/W
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