2N4576 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N4576
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·The device employs the popular JEDEC TO-3
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·High voltage high current power transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
100
V
Collector-Emitter Voltage
80
V
Emitter-Base Voltage
8
V
Collector Current-Continuous
10
A
Collector Power Dissipation@TC=25℃ 150
W
Junction Temperature
200
℃
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
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