2N3584 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 5 Amp, 375V, High Voltage NPN Silicon Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3584
DESCRIPTION
·With TO-66 package
·Continuous collector current-I_C=2A
·Power dissipation -P_D=35W @T_C=25℃
·V_CE(SAT)=0.75V(Max)@I_C=1A;I_B=0.125A
APPLICATIONS
·High speed switching and linear amplification
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
375
250
6
2
5
1
35
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{(th) jc}
Thermal resistance junction to case
MAX
5.0
UNIT
℃/W