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| 2N3583 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(35W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3583
DESCRIPTION
·Contunuous Collector Current-IC= 1A
·Power Dissipation-PD=35W @TC= 25â
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0 V(Max)@ IC = 1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
175
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.0
A
ICM
Collector Current-Peak
5.0
A
IBB
Base Current
1.0
A
PC
Collector Power Dissipation@TC=25â
35
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0
â/W
isc Websiteï¼www.iscsemi.cn
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