2N3441 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,140V,25W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3441
DESCRIPTION
·With TO-66 package
·Continuous collector current-I_C=3A
·Power dissipation -P_D=25W @T_C=25℃
APPLICATIONS
For use in general-purpose switching and
Linear amplifier applications such as:
·Driver for high power outputs
·Series and shunt regulators
·Audio and servo amplifiers
·Solenoid and relay drivers
·Power switching circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
160
140
7
3
2
25
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{(th) jc}
Thermal resistance junction to case
MAX
7.0
UNIT
℃/W