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| 2N3440 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – SPRINGFIELD, NEW JERSEY 07081 | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Silicon Epitaxial Planar NPN transistor
·Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 50mA, IB= 4mA
·Good Linearity of hFE
APPLICATIONS
·Designed for use in consumer and industrial
line-operated applications. particularly suited as
drivers in high-voltage low current inverters,
switching and series regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3.0
A
IB
Base Current
Collector Power Dissipation
@ Ta<50â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
1.0
W
10
200
â
-60~200 â
isc Product Specification
2N3440
isc websiteï¼www.iscsemi.cn
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