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| 2N3055A Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3055A
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJ2955A
APPLICATIONS
·Designed for high power audio, stepping motor and other
linear applications. It can also be used in power switching
circuits such as relay or solenoid drivers,DC-DC converters,
inverters, or for inductive loads.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEV
Collector-Emitter Voltage
100
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25â 115
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.52
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
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